Atomera’s White Paper “MST® Benefits for Gate-All-Around (GAA)”
Jeff Lewis, SVP Business Devt. and Marketing
Our White Paper “MST® Benefits for Gate-All-Around (GAA)” describes how the MST film can improve the latest GAA transistors. GAA transistors (“GAAFETs”, also called “RibbonFETs”, “NanosheetFETs”, or “Multi-Bridge Channel FETs”) are the next evolutionary transistor type, just as FinFETs replaced planar devices ten years ago in the most advanced nodes. GAAFETs are now preferred because they overcome many of FinFET’s scaling limitations, thus enabling a continued scaling roadmap as well as higher drive current and lower “off-state” leakage.
Our previous White Paper, “Smoothing the Surface: MST® Turbo-Charges GAA Devices”, described the physics behind the MST technology’s ability to lower surface-roughness scattering and thus significantly improve the mobility of GAAFETs, FinFETs, and planar devices.
In this White Paper, we build on this mobility physics to quantify the expected mobility improvement, and to describe additional ways the MST technology might be used to improve GAAFETs, including dopant diffusion control, the recently discovered work-function engineering potential of MST, and the MST film’s ability to improve contacts by reducing the Schottky-barrier height. This White Paper will demonstrate that the MST technology has the potential to provide substantial benefits to GAAFETs in the following four ways:
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- Improving device mobility by ~15%
- Creating enhanced Punch-Through Stop (PTS) layers
- Enabling thinner work function metals (WFMs) that reduce stacking height by 10%
- Reducing overall contact resistance by 11%
This White Paper is available for download at the link HERE