Image Sensors

MST Provides a Toolkit to Improve Image Sensors

Pixel Transistor Enhancement by MST

4T Active Pixel Sensor

Transistor Type

Performance Enhancement by MST

Transfer Gate (TG)

MST can reduce surface doping and thus reduce leakage associated with Gate Induced Drain Leakage (GIDL) and Trap-Assisted Tunneling (TAT) mechanisms

Source Follower (SF)

MST can reduce gate leakage by ~50% and also enhance source follower gain by increasing transistor Gm

Source Follower (SF) Reset gate (RG)

MST can reduce Vt variability via formation of SSR channel profiles and thus improve Fixed Pattern Noise (FPN)