Remote Control of Doping Profile, Silicon Interface, and Gate Dielectric Reliability via Oxygen Insertion into Silicon Channel

IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - 2022

Insertion of partial monolayers of oxygen atoms into Si lattice leads to modification of formation enthalpy of various dopants and point defects, enabling remote control of doping profiles away ...

Source engineering on Oxygen-Inserted Si channel for gate length scaling of low-voltage switch devices

IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - 2022

Source engineering for gate length scaling of low-voltage power switch devices was demonstrated by shrinking baseline 5V analog MOSFETs down to 0.25um, leading to 100% increase in drive current ...

RFSOI n-MOSFET OI-Layer Ground-Plane Engineering with Quasi-3D Simulations

International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - 2021

Here we demonstrate a novel quasi-3D simulation technique for partially depleted RFSOI MOSFETs, modeling the use of oxygen-inserted (OI) layers to form a p+ ground plane in the SOI by ...

Intermixing reduction in ultra-thin titanium nitride/hafnium oxide film stacks grown on oxygen-inserted silicon and associated reduction of the interface charge dipole

Journal of Applied Physics 130, 185303- 2021

Oxygen-insertion (OI) layers in Si were found to reduce the intermixing of a 3.0 nm titanium nitride (TiN)/3.5 nm hafnium oxide (HfO2) film stack, as measured by secondary ion mass spectroscopy ...

Analysis of the Effects of Boron Transient Enhanced Diffusion on Threshold Voltage Mismatch in Steep Retrograde Doping NMOSFETs with Inserted Oxygen Layers – August 2020

This paper, written by co-authors from Atomera’s partner, Asahi-Kasei Microsystems (AKM), along with Atomera staff and co-authors from San Jose State University and tei Solutions contains ...

Tuning of Schottky barrier height using oxygen-inserted (OI) layers and fluorine implantation

AIP Advances (Vol.10, Issue 6) – June 2020

Paper describing the application of MST to Schottky Barrier engineering, co-authored with UC Berkeley and Axcelis. FinFET contact resistance reduces on-state current and transistor performance. ...

Applications of Oxygen Inserted Silicon Devices in Power and RF: (invited)

2020 4th IEEE ETDM Conference – April 2020

This invited paper, written with a TCAD expert co-author from San Jose State University (formerly at Synopsys), illustrates the MST doping profile engineering capability with examples from 5V ...

Effects of oxygen-inserted layers and oxide capping layer on dopant activation for the formation of ultrashallow p-n junctions in silicon

Journal of Vacuum Science & Technology B 36, 061211 - 2018

The effects of oxygen-inserted (OI) layers and a low-temperature-deposited oxide (LTO) capping layer on rapid thermal activation of ultrashallow implanted boron, phosphorus, and arsenic atoms in ...

Suppressing Oxidation-Enhanced Diffusion of Boron via Buried Epitaxial Oxygen-Inserted Layers in Silicon – IEEE Conferences – September 2018

This is the expanded journal version of the 2018 EDTM paper from the Atomera team and a co-author from Synopsys (NASDAQ:SNPS) describing the important discovery that MST can almost completely ...

Suppressing Oxidation-Enhanced Diffusion of Boron in Silicon With Oxygen-Inserted Layers – IEEE Journals & Magazine – September 2018

This is the expanded journal version of the 2018 EDTM paper from the Atomera team and a co-author from Synopsys (NASDAQ:SNPS) describing the important discovery that MST can almost completely ...

Experimental Investigation of N-Channel Oxygen-Inserted (OI) Silicon Channel MOSFETs with High-K/Metal Gate Stack – IEEE Conference Publication August, 2018

This paper describes an experimental characterization with co-authors from the University of Notre Dame demonstrating significant mobility improvement (23%) and gate leakage reduction (2.7x) ...

Effects of oxygen-inserted layers on diffusion of boron, phosphorus, and arsenic in silicon for ultra-shallow junction formation

Journal of Applied Physics 123, 125704 (2018)

This paper, with co-authors from UC Berkeley and Axcelis provides an experimental demonstration of an application of MST® to improve shallow junction technology. The data and associated ...

Punch-Through Stop Doping Profile Control via Interstitial Trapping by Oxygen-Insertion Silicon Channel

IEEE J-EDS November, 2017

This paper was invited for a special issue of the IEEE Journal of Electron Device Society based on the high ranking of the EDTM paper of the same title. It is an expanded version of the EDTM ...

The impact of oxygen insertion technology on SRAM yield performance

IEEE EDTM Conference 2017 June, 2017

This paper with co-authors from UT Dallas and elsewhere describes the simulation of 28nm planar SRAM incorporating MST®. Significant improvements in SRAM yield and Vmin are demonstrated, which ...

Punch-through stop doping profile control via interstitial trapping by oxygen-insertion silicon channel

IEEE EDTM Conference 2017 – June, 2017

This paper with co-authors from Prof. Suman Datta’s group at Penn State University (now at University of Notre Dame) describes the experimental engineering and modeling of boron and phosphorus ...

Comparison of SOI versus Bulk FinFET Technologies for 6T-SRAM Voltage Scaling at the 7-/8-nm Node

IEEE Transactions on Electron Devices, Vol. 64, Issue 1 January, 2017

This paper, with co-authors from UC Berkeley compares the implementation of MST® technology on bulk and SOI FinFETs. It shows that a bulk MST® FinFET provides almost all the benefits of the more ...

Analysis of 7/8-nm Bulk-Si FinFET Technologies for 6T-SRAM Scaling

IEEE Transactions on Electron Devices - April 2016

The benefits of a super-steep retrograde (SSR) fin doping profile, which can be achieved using the oxygen insertion technology, are quantified via 3-D technology computer-aided design ...

Electron mobility enhancement in (100) oxygen-inserted silicon channel

Applied Physics Letters 107, 123502 (2015) September, 2015

Applied Physics Letter with co-authors from SK Hynix and UC Berkeley detailing the origins of the very large (88%) measured increase in conductance (gm) for Oxygen Inserted (MST®) nMOS devices.

Extension of Planar Bulk n-Channel MOSFET Scaling With Oxygen Insertion Technology

IEEE Transactions Electron Devices, vol. 61, no. 9, pp 3345-3349, September 2014 September, 2014

Paper with co-authors from UC Berkeley describing the wide range of power and performance benefits of MST® to extend the industry scaling of low power bulk nMOS devices.

Oxygen-Inserted SegFET: A Candidate for 10 nm Node System-on-Chip Applications

2014 IEEE Silicon Nanoelectronics Workshop June 8, 2014

Paper with authors from UC Berkeley describing how MST® can enhance a new quasi-planar device, the SegFET, with performance that competes with the best 10nm generation devices for ...

Effectivness of Quasi-Confinement Technology for Improving P-Channel Si and Ge MOSFET Performance

2013 IEEE Silicon Nanoelectronics Workshop June 9, 2013

Details the benefits of MST® for silicon and germanium p-type planar & FinFET devices over a wide range of technologies.

Comparative Study of Uniform Versus Supersteep Retrograde MOSFET Channel Doping and Implications for 6T SRAM Yield

IEEE Transactions Electron Devices, vol. 60, no. 5, pp 1790-1793, May 2013 May 5, 2013

Joint paper with UC Berkeley simulating the improved yield and reduced minimum operating voltage of MST®-enabled 6-T SRAM cells with potentially up to 50% power savings.

MOSFET Performance and Scalability Enhancement by Insertion of Oxygen Layers

IEEE IEDM 2012 December 12, 2012

IEDM paper with UC Berkeley, introducing and calibrating the model for the MST® confinement effect using Synopsys Sentaurus platform simulation tools. Mobility (conductivity) enhancement for ...

Tunneling through superlattices: the effect of anisotropy and kinematic coupling

Journal of Physics: Condensed Matter, Volume 24, Number 49 November 12, 2012

Paper analyzing the origins of tunneling of carriers in various superlattice systems and providing a theoretical background for the observed reduction in gate leakage in MST® devices. Gate ...

Simultaneous Carrier Transport Enhancement and Variability Reduction in Si MOSFETs by Insertion of Partial Monolayers of Oxygen

2012 IEEE Silicon Nanoelectronics Workshop June 10-11, 2012

We demonstrate simultaneous nMOS and pMOS high-field mobility enhancement and variability reduction by inserting partial monolayers of oxygen during silicon epitaxy of the channel layer.

Silicon Superlattice on SOI for High Mobility and Reduced Leakage

IEEE International SOI Conference 2007 October 1-4, 2007

This joint experimental paper with authors from Texas Instruments and Sematech (ATDF) demonstrates the first MST® mobility enhancement and gate leakage reduction results for a MST-enhanced ...