Performance Enhancing Materials
5V NFET Mobility
1.8V NFET Mobility
Lower Power Means Greener Electronics
Reliability Leads to a Longer Life and Higher Performance
Lower Cost is Always Better
Reducing the Variability Problem
MST matching data 1.8V PFET
MST matching data 1.8V NFET
Additional MST Advantages
‘Silicon‐on‐Silicon’ – Additive Benefits
MST is a single crystal ‘Silicon-on-Silicon’ solution that provides multiple benefits through a relatively simple modification to the standard CMOS manufacturing flow; one that can be used across multiple process technology “nodes” and a variety of IC product generations. The technology is also additive and complementary to SOI and strain technology.
High Benefit / Cost Ratio
MST lends itself to further enhancement and customization, as the epitaxial layer design can be optimized for specific applications based on performance priorities and cost targets. With a low fabrication process flow cost for the single film insertion, MST delivers a high benefit to cost ratio across multiple products.