MST® Benefits for Gate-All-Around (GAA)
Whitepaper by Robert Mears and Hideki Takeuchi
In this White Paper we outline some recent learning about Atomera’s MST® technology and
how it can be used to improve advanced 3D devices, particularly gate-all-around (GAA)
nanosheet devices (sometimes also called “RibbonFETs” or “Multi-Bridge Channel” (MBC) FETs). The key MST benefits for these devices are dopant diffusion control [1], improved mobility[2,3], the recently discovered work-function engineering potential of MST [4] and MST’s ability to improve contacts by reducing the Schottky-barrier height [5].