MST helps extend planar roadmap
In my previous blog post, I highlighted one of the benefits of MST® for engineering channel doping profiles. In that application, the goal was to keep dopants away from the surface region where (inversion) on-state conduction occurs while maintaining higher doping...
MST for Sharper Profiles
One of the unique attributes of Atomera’s MST® technology is that it provides a new degree of freedom in the design and implementation of semiconductor doping profiles. In planar CMOS devices, a vertical well profile is typically engineered by one or more implants,...
Atomera Announces 2nd Annual Technology Seminar at IEDM 2018
SAN FRANCISCO, November 30, 2018 – IEDM Conference 2018 –Atomera Incorporated (NASDAQ: ATOM), a semiconductor materials and intellectual property licensing company focused on deploying its proprietary technology into the semiconductor industry, will be holding a...
Atomera Licenses MST to STMicroelectronics
Highlights: STMicroelectronics, a global semiconductor leader serving customers across the spectrum of electronics applications, has executed an integration license for Atomera’s Mears Silicon Technology™ (MST) as a continuation of their R&D phase. The...