MST Dopant Blocking for Advanced 3D Applications
Advanced 3D devices for the 2/3nm node, such as nanosheets, gate-all-around (GAA) and other structures, build on existing bulk FinFET manufacturing technology. The requirements for managing abrupt interfaces, with steep doping profiles, are becoming increasingly stringent. Atomera’s MST® technology can be used to control dopant diffusion in layers thinner than 5nm, meeting key requirements for advanced 3D devices.
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