Whitepaper

MST Dopant Blocking for Advanced 3D Applications


Advanced 3D devices for the 2/3nm node, such as nanosheets, gate-all-around (GAA) and other structures, build on existing bulk FinFET manufacturing technology. The requirements for managing abrupt interfaces, with steep doping profiles, are becoming increasingly stringent. Atomera’s MST® technology can be used to control dopant diffusion in layers thinner than 5nm, meeting key requirements for advanced 3D devices.
DOWNLOAD NOW

Send download link to:

I confirm that I have read and agree to the Privacy Policy.

The whitepaper will be emailed to you immediately. If you do not receive, please check your spam folder.